NAME

TITLE

COMPANY

DATE

STREET,P.O. BOX

CITY,STATE,COUNTRY,ZIP/POSTALCODE

PHONE # EXT.

FAX #

EMAIL ADDRESS

WHEN NEEDED PRICE RANGE

Industry:

SEMICONDUCTOR OPTICAL METALLURGICAL

OTHER

Production:

PILOT PLANT RESEARCH & DEVELOPMENT

Process Needed:

PHYSICAL VAPOR DEPOSITION (PVD) ION VAPOR DEPOSITION (IVD) ELECTRON BEAM (EB) SPUTTERING ION BEAM ASSIST DEP. (IBAD) METAL ION CATHODIC ARC PLASMA ASSIST

OTHER

1. Film Materials / Thicknesses (angstroms)

a./

b./

2. Which of these materials to be co-deposited, if any?

a.

b.

3. Substrate Material:

3a. Number of substrate sides to be coated

4. Size of Substrates: (inches or millimeters please specify)

Height by Width Thickness

Diameter by Thickness

5. Estimated throughput quantity processed:/week

5a. Is this a new process for you? Yes No

5b. If not a new process, what are you using now?

Make/Model

6. Above throughput on 1 2 3shift basis

7. Temperature of substrates:

Preheatdeg. C

Duringdeg. C

8. Type of high vacuum pumping:

Diffusion Cryopump Turbomolecular Other

9a. Fully automated Computer Master Processor control with datalog/other options? Yes No

9b. Automatic Vacuum System control only? Yes No

9c. Manual control only? Yes No

10a. Desired vacuum level prior to process:torr

10b. Desired vacuum level during process:torr

11. Gas Backfill - for reactive cooling, other:

Pressure/Type:

a.torr/

b.torr/

12. Substrate removal at deg. C

13. Any special cooldown during each layer:

a. Fromdeg. C todeg. C

b. Fromdeg. C todeg. C

14. Number of layers to be sintereddeg. C

15. Any special conditioning prior to or during process - i.e. sputter etch:

Type material Thicknessangstroms

16. Minimum no. of machines desired for production of above

17. Utilities available: Vac, Vac

H20 - City/Chilled, LN2, Airpsig

17. Class clean room